Hysteresis modeling in ballistic carbon nanotube field-effect transistors

Hysteresis modeling in ballistic carbon nanotube field-effect transistors

Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as a function of drain-source and gate-source voltages as well as other physical parameters of the ...

Modeling of Carbon Nanotube Field Effect Transistors

Modeling of Carbon Nanotube Field-Effect Transistors

In this thesis, models are presented for the design and analysis of carbon nanotube field-effect transistors (CNFETs). Such transistors are being seriously considered for applications in the emerging field of nanotechnology. Because of the small size of these devices, and the nearone-dimensional nature of charge transport within them, CNFET modeling demands a rigorous quantum-mechanical basis. ...

Performance Projections for Ballistic Carbon Nanotube Field-Effect Transistors

The performance limits of carbon nanotube field-effect transistors ~CNTFETs! are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide– semiconductor field-effect transistors ~MOSFETs!. Compared to ballistic MOSFETs, ballistic CNTFETs show similar I – V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNT...

Carbon Nanotube Field Effect Transistors

The present paper treats the Carbon Nanotube Field Effect Transistors (CNFETs) in terms of new development as a possible future basic element for beyond CMOS technology used in ultra high scale integration ULSI. The CNFET is studied both in physical as well as technological point of views aiming a further understanding of the limitations to high integration density. The different types of carbo...